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january 2015 docid025143 rev 3 1 / 15 this is information on a product in full production. www.st.com STS9P2UH7 p - channel 20 v, 0.0195 ? typ., 9 a stripfet? h7 power mosfet in a so - 8 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STS9P2UH7 20 v 0.0225 @ 4.5 v 9 a ? very low on - resistance ? very low capacitance and gate charge ? high avalanche ruggedness ? ultra logic level applications ? switching applications description this device exhibits low on - state resistance and capacitance for improved conduction and switching performance. table 1: device summary order code marking package packaging STS9P2UH7 9l2u so - 8 tape and reel for the p - channel power mosfet the actual polarity of the voltages and the current must be reversed. so-8 5 8 4 1
contents STS9P2UH7 2 / 15 docid025143 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 so - 8 package mechanical data ................................ ........................ 9 5 packaging mechanica l data ................................ .......................... 12 5.1 so - 8 tape and reel mechanical data ................................ ............... 12 6 revision history ................................ ................................ ............ 14
STS9P2UH7 electrical ratings docid025143 rev 3 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 20 v v gs gate - source voltage 8 v i d drain current (continuous) at t pcb = 25 c 9 a i d drain current (continuous) at t pcb = 100 c 5.8 a i dm (1) drain current (pulsed) 36 a p tot total dissipation at t pcb = 25 c 2.7 w t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c notes: (1) pulse width limited by safe operating area table 3: thermal data symbol parameter value unit r thj - pcb (1) thermal resistance junction - pcb max 47 c/w notes: (1) when mounted on 1inch2 fr - 4 board, 2 oz cu for the p - channel power mosfet the actual polarity of the voltages and the current must be reversed.
electrical characteristics STS9P2UH7 4 / 15 docid025143 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 250 a 20 v i dss zero gate voltage drain current v gs = 0, v ds = 20 v 1 a i gss gate - body leakage current v ds = 0, v gs = 5 v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.4 1 v r ds(on) static drain - source on - resistance v gs = 4.5 v, i d = 4.5 a 0.0195 0.0225 v gs = 2.5 v, i d = 4.5 a 0.02 0.025 v gs = 1.8 v, i d = 4.5 a 0.036 0.043 v gs = 1.5 v, i d = 4.5 a 0.05 0.085 table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 16 v, f = 1 mhz - 2390 - pf c oss output capacitance - 220 - pf c rss reverse transfer capacitance - 188 - pf q g total gate charge v dd = 16 v, i d = 9 a, v gs = 4.5 v - 22 - nc q gs gate - source charge - 4.2 - nc q gd gate - drain charge - 3.6 - nc table 6: switching times symbol parameter test conditions min. typ. max unit t d(on) turn - on delay time v dd = 16 v, i d = 9 a, r g = 1 , v gs = 4.5 v - 12.5 - ns t r rise time - 30.5 - ns t d(off) turn - off delay time - 128 - ns t f fall time - 84.5 - ns
STS9P2UH7 electrical char acteristics docid025143 rev 3 5 / 15 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd ( 1 ) forward on voltage v gs = 0, i sd = 1 a - 1 v t rr reverse recovery time v dd = 16 v di/dt = 100 a/s, i sd = 1 a - 15.8 ns q rr reverse recovery charge - 5.9 nc i rrm reverse recovery current - 0.7 a notes: ( 1 ) pulsed: pulse duration = 300 s, duty cycle 1.5% for the p - channel power mosfet the actual polarity of the voltages and the current must be reversed.
electrical characteristics STS9P2UH7 6 / 15 docid025143 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistanc e i d 15 5 0 0 2 v ds (v) 6 (a) 4 v gs =2.5, 3, 3.5, 4, 4.5, 5v 10 20 8 2v 1.5v gipg210520141044s a i d 8.00 0.00 0 1 v gs (v) 2 (a) 0.5 1.5 4.00 12.00 v ds =2v gipg210520141055s a v gs 3 2 1 0 0 10 q g (nc) (v) 4 15 20 v dd =16v i d =9 a 5 gipg210520141043s a r ds(on) 19.0 18.5 18.0 0 2 i d (a) (m ) 1 3 19.5 v gs =4.5v 4 5 20.0 20.5 6 gipg21052014 1 102s a 0.05 0.02 0.01 0.1 0.2 pcb i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100s 0.01 tj=150c tpcb=25c single pulse gipg2105201410 1 1s a
STS9P2UH7 electrical characteristics docid025143 rev 3 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : source - drain diode forward characteristics r ds(on) 1.4 0.8 0.4 0.0 t j (c) (norm) 0.2 0.6 1.0 1.2 1.6 i d =4.5 a v gs =4.5v -75 75 -25 125 25 gipg21052014 11 19s a v gs(th) 0.6 0.4 0.2 -75 t j (c) (norm) 0.8 75 -25 125 i d =250 a 25 1 1.2 1.4 gipg21052014 11 14s a v (br)dss t j (c) (norm) 0.92 0.96 1 1.04 i d =1m a -75 75 -25 125 25 gipg21052014 1 132s a v sd 1 3 i sd (a) (v) 2 6 4 5 0.5 0.6 0.7 0.8 t j =-55c t j =75c t j =25c 0.9 7 8 gipg21052014 1 134s a c 1000 100 0 8 v ds (v) (pf) 4 12 ciss coss crss 16 gipg21052014 1 108s a
test circuits STS9P2UH7 8 / 15 docid025143 rev 3 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STS9P2UH7 package mechanical data docid025143 rev 3 9 / 15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 so - 8 package mechanical data figure 16 : so - 8 drawing
package mechanical data STS9P2UH7 10 / 15 docid025143 rev 3 table 8: so - 8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 d 4.80 4.90 5.00 e 5.80 6.00 6.20 e1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 l 0.40 1.27 l1 1.04 l2 0.25 k 0 8 ccc 0.10
STS9P2UH7 package mechanical data docid025143 rev 3 11 / 15 figure 17 : so - 8 recommended footprint
packaging mechanical data STS9P2UH7 12 / 15 docid025143 rev 3 5 packaging mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environment al compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 5.1 so - 8 tape and reel mechanical data figure 18 : so - 8 tape and reel dimensions
STS9P2UH7 packaging mechanical data docid025143 rev 3 13 / 15 table 9: so - 8 tape and reel mechanical data dim. mm min. typ. max. a - 330 c 12.8 - 13.2 d 20.2 - n 60 - t - 22.4 ao 8.1 - 8.5 bo 5.5 - 5.9 ko 2.1 - 2.3 po 3.9 - 4.1 p 7.9 - 8.1
revision history STS9P2UH7 14 / 15 docid025143 rev 3 6 revision history table 10: document revision history date revision changes 27 - aug - 2013 1 first release. 04 - jun - 2014 2 document status promoted from preliminary data to production data modified: title modified: r ds(on) max value in cover page modified: r ds(on) (typical and maximum) values in table 4: "on /off states" modified: the entire typical values in table 5: "dynamic" , table 6: "switching times" and table 7: " source drain diode" added: section 8.1: "electrical characteristics (curves)" minor text changes 12 - jan - 2015 3 updated title, features and description i n cover page. updated figure 3: "thermal impedance" .
STS9P2UH7 docid025143 rev 3 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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